Application of PVC to significantly improve the success rate in locating trench defect using FIB after electrical failure localization

Abstract

The paper outlines the application of passive voltage contrast (PVC) to significantly improve the success rate of 100% in locating trench defect especially gate oxide rupture using FIB after electrical failure localization. With this methodology, it enhances analysis throughput and accuracy without the need of having high resolution FIB.

Cite this paper

@article{Zakaria2013ApplicationOP, title={Application of PVC to significantly improve the success rate in locating trench defect using FIB after electrical failure localization}, author={Nurhanani Zakaria}, journal={Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, year={2013}, pages={103-106} }