Application of BSIMSOI MOSFET model to SOS technology

Abstract

The BSIMSOI model largely dominates the modeling of silicon-on-insulator (SOI) MOSFET technologies. Silicon-on-sapphire (SOS) technology has many of the advantages of SOI for RF and low-power applications, but with enhanced electrical isolation and heat dissipation, among others. We show that BSIMSOI can reasonably describe state-of-the-art SOS devices as… (More)

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Cite this paper

@article{Roach2010ApplicationOB, title={Application of BSIMSOI MOSFET model to SOS technology}, author={James Roach and Lee-Wen Chen and Peter Clarke and Francis M. Rotella}, journal={2010 IEEE Radio Frequency Integrated Circuits Symposium}, year={2010}, pages={475-478} }