Application benefits achieved utilizing IGBT5-based power semiconductors

@article{Schulz2015ApplicationBA,
  title={Application benefits achieved utilizing IGBT5-based power semiconductors},
  author={Martin Schulz and Dirk Brieke and Raghavan Nagarajan and Zhen Bo Zhao},
  journal={2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)},
  year={2015},
  pages={1823-1826}
}
This paper deals with the thermal aspects that arise from using the next generation of high power semiconductors featuring a maximum operating temperature for the 5th generation IGBT of 175°C. The benefits that arise for the application and the points that need to be considered beyond the semiconductors are evaluated using a hardware demonstrator.