Antireflective disordered subwavelength structure on GaAs using spin-coated Ag ink mask.

Abstract

We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs d-SWSs rely on their geometric profiles, which… (More)
DOI: 10.1364/OE.20.019554

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