Anomalous gate-to-drain capacitance characteristics of GaAs MESFET's

Abstract

Anomalous gate-to-drain capacitance characteristics of GaAs MESFET's are discussed using a two-dimensional device simulator. Gate-to-drain capacitance CGDshows sharp undershoot characteristics with an increase in drain-to-source voltage VDSfor a large donor concentration-thickness product device having a negative drain conductance. By analyzing the… (More)

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