Anodic nitridation of silicon and silicon dioxide

Abstract

Anodic nitridation of Si wafers and SiO<inf>2</inf>films in an ammonia plasma was investigated. Compositions of the anodic nitride and the anodic nitrided-oxide films were analyzed with Auger electron spectroscopy and Rutherford backscattering techniques. The etching and oxidation behavior as well as the interfacial, electrical conduction, and charge… (More)

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Cite this paper

@article{Wong1985AnodicNO, title={Anodic nitridation of silicon and silicon dioxide}, author={S. Wong and W. G. Oldham}, journal={IEEE Transactions on Electron Devices}, year={1985}, volume={32}, pages={978-982} }