Anodic Al2O3/InP MIS interface and its application to enhancement-MISFET's on semi-insulating substrates

@inproceedings{Sawada1982AnodicAM,
  title={Anodic Al2O3/InP MIS interface and its application to enhancement-MISFET's on semi-insulating substrates},
  author={Takayuki Sawada and Kiyokazu Ishii and Hikari Hasegawa},
  year={1982}
}
A simple process to grow anodically high-quality Al2O3, films on InP substrates with good adhesion, is described. The AGW electrolyte is employed. The resultant oxide is uniform and possesses resistivity values in excess of 1015 Ωcm with a breakdown field strength of about 2–3 × 106 V/cm. Properties of anodic Al2O3/InP interfaces arc clarified by quasi-static capacitance-voltage and dynamic DLTS and photo-ionization techniques. The results are. consistent, and indicate that the distribution of… CONTINUE READING