Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system

@article{Devolder2017AnnealingSO,
  title={Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system},
  author={Thibaut Devolder and Sebastien Couet and Johan Swerts and Enlong Liu and T. Lin and Sofie Mertens and Gouri Sankar Kar and Arnaud Furn{\'e}mont},
  journal={Journal of Applied Physics},
  year={2017},
  volume={121},
  pages={113904}
}
We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co reference layer and a FeCoB polarizing layer. Using conventional magnetometry and advanced broadband ferromagnetic resonance, we identify the properties of each sub-unit of the magnetic tunnel junction and demonstrate that this material option can ensure a… 

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