Annealing of CoFeB / MgO based single and double barrier magnetic tunnel junctions : Tunnel magnetoresistance , bias dependence , and output voltage

Abstract

Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after… (More)

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