Corpus ID: 166218854

Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display

@inproceedings{Lu2017AnnealingInducedDI,
  title={Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display},
  author={L. Lu and Y. Jiang and J. Li and Z. Feng and M. Wong and H. Kwok},
  year={2017}
}
  • L. Lu, Y. Jiang, +3 authors H. Kwok
  • Published 2017
  • During the fabrication of an indium-gallium-zinc oxide (IGZO) thin film transistor (TFT), the thermal process was used to reduce the resistivity of IGZO. The annealing temperature was found to have great influence on the transistor characteristics. At an optimized heat-treatment temperature, the depletion-mode IGZO TFT was fabricated with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage. And the relatively conductive IGZO could directly replace the indium… CONTINUE READING
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