Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped
@article{Blanchard2010AnisotropicUE, title={Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped}, author={François Blanchard and Daniel Golde and Fuhai Su and Luca Razzari and Gargi Sharma and Roberto Morandotti and T. Ozaki and Matthew Reid and M. Kira and Stephan W. Koch and F. A. Hegmann}, journal={arXiv: Materials Science}, year={2010} }
The anisotropic effective mass of electrons is directly measured using time-resolved THz- pump/THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is used to attribute this anisotropy in the THz probe transmission to the nonparabolicity of the conduction band. Self-consistent light-matter coupling is shown to contribute significantly to the THz response.
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