Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology

@article{Zhang2017AngularEO,
  title={Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology},
  author={H. Zhang and Hui Jiang and T. R. Assis and Dennis R. Ball and Balaji Narasimham and A. Anvar and Lloyd W. Massengill and Bharat L. Bhuva},
  journal={IEEE Transactions on Nuclear Science},
  year={2017},
  volume={64},
  pages={491-496}
}
Radiation particles are incident on an integrated circuit (IC) from all angles. For planar technologies, angular incidence increases the deposited charge in a given volume, resulting in higher collected charge at a node and more transistors collecting charge due to increased charge sharing. For FinFET technologies, the physical structure of a FinFET is very different from that of a planar transistor. As a result, deposited and collected charge at a node for angular incidences will be different… CONTINUE READING
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