Analyzing emitter dopant inhomogeneities at textured Si surfaces by using 3D process and device simulations in combination with SEM imaging

@article{Wagner2012AnalyzingED,
  title={Analyzing emitter dopant inhomogeneities at textured Si surfaces by using 3D process and device simulations in combination with SEM imaging},
  author={Hannes Wagner and Silke Steingrube and Bettina Wolpensinger and Amir Dastgheib-Shirazi and Renyu Chen and Scott T. Dunham and Pietro P. Altermatt},
  journal={2012 38th IEEE Photovoltaic Specialists Conference},
  year={2012},
  pages={000313-000316}
}
The lowering of the phosphorus dopant density in the emitter of Si solar cells is a current topic in the photovoltaic industry. In lowly-doped emitters, diffusion inhomogeneities between the tops of the pyramids and the valleys affect the saturation current density J0. We quantify diffusion inhomogeneities by means of 3D process simulations, and we evaluate J0 by means of 3D device simulations. Finally, we compare the simulated diffusion results with a 2D dopant-contrast analysis obtained with… CONTINUE READING