Analyzing UV/Vis/NIR Spectra—Addition of Oxygen and Nitrogen to ZnO:Al Thin-Films II—Effective Dopant Concentration, Mobility and Lifetime

@article{Stadler2012AnalyzingUS,
  title={Analyzing UV/Vis/NIR Spectra—Addition of Oxygen and Nitrogen to ZnO:Al Thin-Films II—Effective Dopant Concentration, Mobility and Lifetime},
  author={Andreas Stadler and Herbert Dittrich},
  journal={IEEE Sensors Journal},
  year={2012},
  volume={12},
  pages={880-884}
}
Exact optical analysis of aluminum doped zinc-oxide (ZnO:Al) thin-films have been shown in [1], as function of reactive O2-and inert N2-gas additions to the inert Ar process-gas. Here, a theoretical model is introduced, which allows the determination of typical semiconductor parameters, by use of UV/Vis/NIR spectroscopy-a contact-free measurement method. In… CONTINUE READING