Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs

In this paper, we present the analytical modeling on the temperature dependent microwave noise in AlGaN/GaN HEMTs on Si substrate over a wide temperature range from −50 to 200 °C. The noise source coefficients and small signal equivalent circuit parameters (ECPs) were extracted and their variations over temperature were fitted using a simple quadratic… CONTINUE READING