Analytical modeling of the gate tunneling leakage for the determination of adequate high-K dielectrics in 22 nm double-gate SOI MOSFETs

In this paper the gate leakage current in metal-oxide-semiconductor (MOS) is studied in order to find promising materials for the 22 nm node in double gate MOSFETs by considering simple and improved analytical models of the direct tunneling current by using proper WKB tunneling probability through gate oxide.