Analytical modeling of MOSFETs channel noise and noise parameters

Abstract

Simple analytical expressions for MOSFETs noise parameters are developed and experimentally verified. The expressions are based on analytical modeling of MOSFETs channel noise, are explicit functions of MOSFETs geometry and biasing conditions, and hence are useful for circuit design purposes. Good agreement between calculated and measured data is… (More)

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Cite this paper

@article{Asgaran2004AnalyticalMO, title={Analytical modeling of MOSFETs channel noise and noise parameters}, author={Saman Asgaran and M. Jamal Deen and Chih-Hung Chen}, journal={IEEE Transactions on Electron Devices}, year={2004}, volume={51}, pages={2109-2114} }