Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

@inproceedings{Kranti2001AnalyticalMF,
  title={Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET},
  author={Abhinav Kranti and S. Haldar and R. S. Gupta},
  year={2001}
}
Abstract The present paper proposes an analytical model of threshold voltage and current voltage characteristics for short channel fully depleted cylindrical/surrounding gate MOSFET based on the solution of Poisson’s equation in cylindrical coordinates. The analysis takes into account the field-dependent mobility, velocity saturation and the effect of source/drain resistance. Advantages of surrounding/cylindrical structure over the conventional planar structure are investigated in detail. The… CONTINUE READING

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