Analytical model for predicting threshold voltage in submicrometer-channel MOSFET's

@article{Tang1985AnalyticalMF,
  title={Analytical model for predicting threshold voltage in submicrometer-channel MOSFET's},
  author={Ting-Wei Tang and Qian-Ling Zhang and D Navon},
  journal={IEEE Transactions on Electron Devices},
  year={1985},
  volume={32},
  pages={1890-1893}
}
A quasi-two-dimensional analytical closed-form determination of the threshold voltage has been derived for submicrometer-channel-length MOSFET's. The invalid assumption of uniform depletion-layer width made in a prior similar computation has been corrected. A comparison between the results of previous extensive two-dimensional numerical analyses and the present analysis proves that the present model is quite accurate.