Analytical loss model of power MOSFET

@article{Ren2006AnalyticalLM,
  title={Analytical loss model of power MOSFET},
  author={Yuancheng Ren and Ming Xu and Jinghai Zhou and F. C. Lee},
  journal={IEEE Transactions on Power Electronics},
  year={2006},
  volume={21},
  pages={310-319}
}
An accurate analytical model is proposed in this paper to calculate the power loss of a metal-oxide semiconductor field-effect transistor. The nonlinearity of the capacitors of the devices and the parasitic inductance in the circuit, such as the source inductor shared by the power stage and driver loop, the drain inductor, etc., are considered in the model. In addition, the ringing is always observed in the switching power supply, which is ignored in the traditional loss model. In this paper… CONTINUE READING
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