Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_{C}/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules

Abstract

In this paper, a dynamic thermo-sensitive electrical parameter (DTSEP) for extracting the junction temperature of the trench gate/field-stop insulated gate bipolar transistor (IGBT) modules by using the maximum collector current falling rate is proposed. First, a theoretical model of the transient collector current during turn-<sc>off</sc> process is… (More)

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