Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region

@article{Wu2009AnalyticalQM,
  title={Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region},
  author={Yu-Sheng Wu and Pin Su},
  journal={IEEE Transactions on Electron Devices},
  year={2009},
  volume={56},
  pages={2720-2725}
}
This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design. 
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