• Corpus ID: 220936428

Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures

@article{Roy2020AnalyticalMA,
title={Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures},
author={Saurav Roy and Arkka Bhattacharyya and Sriram Krishnamoorthy},
journal={ArXiv},
year={2020},
volume={abs/2008.00280}
}
• Published 1 August 2020
• Physics
• ArXiv
This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off beyond its already high unipolar figure of merit. The device parameters are optimized using both TCAD simulations and analytical modeling using conformal mapping technique. The dielectric superjunction structure is found to be highly sensitive to the device dimensions and the dielectric constant of the insulator. The…
3 Citations

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References

SHOWING 1-10 OF 12 REFERENCES
Design of Transistors Using High-Permittivity Materials
• Physics
IEEE Transactions on Electron Devices
• 2019
The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric
A Comprehensive Analytical Study of Dielectric Modulated Drift Regions—Part I: Static Characteristics
• Engineering
IEEE Transactions on Electron Devices
• 2016
A comprehensive study of dielectric modulated (DM) drift regions for power devices is presented in this paper. The performance of this structure is theoretically analyzed and compared with both
Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
• Physics
IEEE Transactions on Electron Devices
• 2021
The performance of ultra-wide bandgap semiconductors like <inline-formula> <tex-math notation="LaTeX">${\beta }$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> is critically dependent on
Analytical Calculation of Breakdown Voltage for Dielectric RESURF Power Devices
• Physics
IEEE Electron Device Letters
• 2017
Dielectric REduced SURface Field (RESURF) is a promising concept to enhance the breakdown voltage of power semiconductor devices. This letter reports a set of simple and unified analytical equations
A new generation of high voltage MOSFETs breaks the limit line of silicon
• Physics
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
• 1998
For the first time a new device concept for high voltage power devices has been realized in silicon. Our 600 V-COOLMOS/sup TM/ reaches an area specific on-resistance of typically 3.5 /spl Omega//spl
200V Super Junction MOSFET Fabricated by High Aspect Ratio Trench Filling
• Engineering
2006 IEEE International Symposium on Power Semiconductor Devices and IC's
• 2006
In this paper, a new filling process using an anisotropic epitaxial growth was proposed as the fabrication method of a super junction (SJ) MOSFET. The anisotropic growth controlled with silicon (Si)
Superjunction Power Devices, History, Development, and Future Prospects
• Engineering
IEEE Transactions on Electron Devices
• 2017
The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide-bandgap materials) to derive its set of benefits and limitations.
Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET
• Physics, Engineering
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
• 1999
In this paper, a novel device called the super junction MOSFET is analyzed using analytical modeling and numerical simulations. The effect of charge imbalance between the N and P pillars on the
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ $R_{\text{on,sp}}$ of up to 0.95 GW/cm2
• Physics
IEEE Electron Device Letters
• 2020
We report the realization of field-plated vertical Ga<sub>2</sub>O<sub>3</sub> trench Schottky barrier diodes (SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With
Dielectric resurf: breakdown voltage control by STI layout in standard CMOS
• Engineering
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
• 2005
We demonstrate a novel device concept, in which junctions (active regions in CMOS) are interleaved with dielectric regions (STI) in order to increase the junction breakdown voltage. Experiments