Analytical Model of Surface Potential and Threshold Voltage of Biaxial Strained Silicon Nmosfet including Qme

Abstract

In this paper physics based analytical model for threshold voltage of nanoscale biaxial strained nMOSFET has been presented. The maximum depletion depth and surface potential in biaxial strained–Si nMOSFET is determined, taking into account both the quantum mechanical effects (QME) and effects of strain in inversion charge sheet. The results show that a… (More)

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