Analytic modeling of static noise margin considering DIBL and body bias effects

@article{Olivera2017AnalyticMO,
  title={Analytic modeling of static noise margin considering DIBL and body bias effects},
  author={Fabian Olivera and Antonio Petraglia},
  journal={2017 IEEE International Symposium on Circuits and Systems (ISCAS)},
  year={2017},
  pages={1-4}
}
  • Fabian Olivera, Antonio Petraglia
  • Published in
    IEEE International Symposium…
    2017
  • Computer Science
  • In this paper an analytic model of the inverter static noise margin (SNM) is presented. The drain-induced barrier lowering (DIBL) effects are considered in view of the fact that their influence becomes more critical in nanometer (below 90 nm) bulk CMOS nodes, as devices are dimensioned with minimum sizes and operate in sub-threshold region. The inclusion of body bias effect in the SNM model is proposed since the FD-SOI CMOS process allows the substrate voltage on a wide range, making it crucial… CONTINUE READING

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