Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

@article{Jimnez2010AnalyticMF,
  title={Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors},
  author={David Jim{\'e}nez and Enrique Alfredo Miranda and Andrex0301s Godoy},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={2405-2409}
}
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance (NC) region could act as a step-up converter of the surface potential in a metal-oxide-semiconductor structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S <; 60mV/dec). In this paper, a comprehensive physics-based surface potential and a drain current model for the NC field-effect transistor are reported. The model is aimed to… CONTINUE READING
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