Analysis of trapping and detrapping in semi - insulating GaAs detectors

Abstract

To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.

Cite this paper

@inproceedings{Rogalla1997AnalysisOT, title={Analysis of trapping and detrapping in semi - insulating GaAs detectors}, author={M . Rogalla and Th . Eich and Nick Evans and R. Geppert and R . G{\"{o}ppert and R. Irsigler and Jean Ludwig and Karl Runge and Danielle Marder}, year={1997} }