Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects

@article{Mizubayashi2013AnalysisOT,
  title={Analysis of threshold voltage shifts in double gate tunnel FinFETs: Effects of improved electrostatics by gate dielectrics and back gate effects},
  author={Wataru Mizubayashi and Koichi Fukuda and Takahiro Mori and Kazuhiko Endo and Y. X. Liu and Takashi Matsukawa and Shin-ichi O'Uchi and Yuki Ishikawa and Shinji Migita and Yukinori Morita and A. Tanabe and Junichi Tsukada and Hiromi Yamauchi and Meishoku Masahara and Hiroyuki Ota},
  journal={2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)},
  year={2013},
  pages={1-2}
}
We analyzed the threshold voltage (Vth) shift due to EOT scaling in double gate (DG) tunnel FinFETs (tFinFETs). It is found that Vth in tFinFETs has high sensitivity of EOT, which is quite different as compared with MOSFETs. We proposed a simple model which is indispensable to design the tFinFETs structure for the first time. In order to correct the Vth modulation due to EOT scaling in tFinFETs, we studied the back gate effect in independent-DG tFinFETs and revealed that the back bias is… CONTINUE READING
2 Citations
0 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-2 of 2 extracted citations

Similar Papers

Loading similar papers…