Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors

@inproceedings{Tong2009AnalysisOT,
  title={Analysis of thermoelectric characteristics of AlGaN and InGaN semiconductors},
  author={Hua Tong and Hongping Zhao and Vincent A. Handara and Juan Alejandro Herbsommer and Nelson Tansu},
  booktitle={OPTO},
  year={2009}
}
The thermoelectric properties of AlGaN and InGaN semiconductors are analyzed. In our analysis, the thermal conductivities, electrical conductivities, Seebeck coefficients, and figure of merits (Z*T) of AlGaN and InGaN semiconductors are computed. The electron transports in AlGaN and InGaN alloys are analyzed by solving Boltzmann transport equation, taking into account the dominant mechanisms of energy-dependent electron scatterings. Virtual crystal model is implemented to simulate the lattice… CONTINUE READING

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