Analysis of the relationship between random telegraph signal and negative bias temperature instability

@article{Tsukamoto2010AnalysisOT,
  title={Analysis of the relationship between random telegraph signal and negative bias temperature instability},
  author={Yasumasa Tsukamoto and Seng Oon Toh and Changhwan Shin and Andrew Mairena and Tsu-Jae King Liu and Borivoje Nikolicx0301},
  journal={2010 IEEE International Reliability Physics Symposium},
  year={2010},
  pages={1117-1121}
}
Random telegraph signal (RTS) is shown to be an intrinsic component of the shift in MOSFET threshold voltage (Vth) due to bias temperature instability (BTI). This is done by starting from a well-known model for negative BTI (NBTI), to derive the formula for RTS-induced Vth shift. Based on this analysis, RTS simply contributes an offset in NBTI degradation, with an acceleration factor that is dependent on the gate voltage and temperature. This is verified by 3-dimensional (3-D) device… CONTINUE READING

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