Analysis of the dark current of focal-plane-array Hg1−xCdxTe diode ☆

@inproceedings{Juang2000AnalysisOT,
  title={Analysis of the dark current of focal-plane-array Hg1−xCdxTe diode ☆},
  author={Fuh-Shyang Juang and Y Su and Seung Man Chang and Shoou-Jinn Chang and Cheng-Der Chiang and Ya-Tung Cherng},
  year={2000}
}
Abstract Experimental results are presented for current–voltage and dynamic resistance–voltage characteristics of Hg 1− x Cd x Te ion-implanted p–n junction photodiodes with x =0.22. By measuring the temperature dependence of the dc characteristics in the temperature range 25–140 K, the dark current mechanisms are studied. It was found that the dark currents can be represented with three current components over a broad range of voltage and temperature, i.e. diffusion, trap-assisted tunneling… CONTINUE READING