Analysis of the Survivability of GaN Low-Noise Amplifiers

@article{Rudolph2007AnalysisOT,
  title={Analysis of the Survivability of GaN Low-Noise Amplifiers},
  author={Matthias Rudolph and R. Behtash and Ralf D{\"o}rner and Klaus Hirche and Joachim Wurfl and Wolfgang Heinrich and Gux0308nther Trankle},
  journal={IEEE Transactions on Microwave Theory and Techniques},
  year={2007},
  volume={55},
  pages={37-43}
}
This paper presents a detailed analysis of the stressing mechanisms for highly rugged low-noise GaN monolithic-microwave integrated-circuit amplifiers operated at extremely high input powers. As an example, a low-noise amplifier (LNA) operating in the 3-7-GHz frequency band is used. A noise figure (NF) below 2.3 dB is measured from 3.5 to 7 GHz with NF<1.8 dB between 5-7 GHz. This device survived 33 dBm of available RF input power for 16 h without any change in low-noise performance. The stress… CONTINUE READING
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Robust GaN HEMT low - noise amplifier MMICs for X - band applications , ” in Eur . Gallium Arsenide and Other Semiconduct

  • R. Quay D. Krausse, R. Kiefer, +8 authors G. Weimann
  • Applicat . Symp .
  • 2004

Robust GaN HEMT low-noise amplifier MMICs for X-band applications

  • D. Krausse, R. Quay, +9 authors G. Weimann
  • Eur. Gallium Arsenide and Other Semiconduct…
  • 2004
1 Excerpt

Survivability of InP HEMT devices and MMIC ’ s under high RF input drive

  • H. C. Yen, A. Oki, D. C. Streit
  • IEEE MTTS Int . Microw . Symp . Dig .

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