Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

@inproceedings{Yakimova2012AnalysisOT,
  title={Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates},
  author={R. Yakimova and Chariya Virojanadara and Daniela Gogova and Mikael Syv{\"a}j{\"a}rvi and Dietmar Siche and Krister Larsson and Leif Johansson},
  year={2012}
}
We are aiming at understanding graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of mono layers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to… CONTINUE READING
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