Analysis of temperature dependence of linearity for SiGe HBTs in the avalanche region using Volterra series

Abstract

Article history: Received 9 June 2015 Received in revised form 12 September 2015 Accepted 17 November 2015 Available online 1 April 2016 In this paper, linearity characteristic of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) at different temperatures in the avalanche regime is investigated by the Volterra approach incorporating with a… (More)
DOI: 10.1016/j.microrel.2015.11.011

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