Analysis of spin accumulation in a Si channel using CoFe/MgO/Si spin injectors

Abstract

Spin accumulation in a Si channel using CoFe/MgO/Si spin injectors is investigated. Hanle-effect signals from spin-polarized electrons accumulated in the Si channel are observed using three-terminal spin-accumulation (3T-SA) devices with the spin injectors. The Hanle-effect signals are decomposed into two components, i.e., channel-spin and trap-spin… (More)

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