Analysis of sidewall quality in through-wafer deep reactive-ion etching

The quality of channel sidewalls resulting from through-wafer deep reactive-ion etching is analysed using scanning electron microscopy, atomic-force microscopy and interferometry. Sidewall quality and profile are highly dependent on the width of the etched channel. Channels narrower than 100 lm show generally good sidewall smoothness, though with a bowed… CONTINUE READING

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