Analysis of phase distribution in phase-change nonvolatile memories

@article{Ielmini2004AnalysisOP,
  title={Analysis of phase distribution in phase-change nonvolatile memories},
  author={Daniele Ielmini and A. L. Lacaita and A. Pirovano and Fabio Pellizzer and Roberto Bez},
  journal={IEEE Electron Device Letters},
  year={2004},
  volume={25},
  pages={507-509}
}
The phase transformation in chalcogenide-based nonvolatile memories is studied by cell electrical characterization. The cell state (amorphous, crystalline, or mixed) is changed by applying electrical pulses, then the cell resistance R and the current-voltage characteristics are measured. From the analysis of the electrical parameters of the cell, we provide evidence for a stacked-like phase distribution in the active layer. Results are discussed with reference to the thermal profile during the… CONTINUE READING
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