Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode

@article{Hayashino2012AnalysisOL,
  title={Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode},
  author={K. Hayashino and Kenji Harauchi and Y. Iwasaki and Ken Fukui and Jin-Ping Ao and Yasuo Ohno},
  journal={2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications},
  year={2012},
  pages={179-182}
}
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.