Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells

  title={Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells},
  author={Ulf Ekenberg and Dejan M. Gvozdi{\'c}},
  journal={Physical Review B},
We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms in a multiband approach rather than the commonly used Rashba term dependent on k and electric field. It is pointed out that the expectation value of the electric field in a subband is sometimes not unique because the expectation values can even have opposite… 
8 Citations

Figures and Tables from this paper

A New Method to Calculate the Rashba Spin Splitting in III-Nitride Heterostructures
By constructing proper basis functions, the 8 × 8 Kane Hamiltonian is transformed to two separate 4 × 4 Hamiltonians, and the Schrodinger equation for conduction-band envelope functions can be
Efficient Control of the Rashba Effective Magnetic Field Using Acceptor-Doped Quantum Wells
To induce a strong Rashba effective magnetic field and enhance its sensitivity to an external electric field, we propose acceptor doping in quantum wells. The acceptors are doped at the center of the
Realization of In0.75Ga0.25As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction
Narrow gap InGaAs two-dimensional electron gas (2DEG) bilayer samples are fabricated and confirmed to have good electronic qualities as well as strong Rashba-type spin-orbit interactions (SOIs). The
The band structure of InP is excellently produced using sp3d5s* tight-binding model. The spin-orbit splitting in the whole Brillouin zone derived from the InP Γ-valley of the lowest electronic
Photo-induced spin filtering in a double quantum dot
We investigate the spin-dependent electron dynamics in a double quantum dot driven by sub-picosecond asymmetric electromagnetic pulses. We show analytically that applying the appropriate pulses,
Variational analysis of the Rashba splitting in III–V semiconductor inversion layers
A spin-dependent variational theory is used to analyze the Rashba spin-orbit splitting in two-dimensional electron gases formed in III–V semiconductor inversion layers. The spin split conduction


Superefficient electric-field–induced spin-orbit splitting in strained p-type quantum wells
We investigate theoretically the efficiency of the Rashba effect, i.e. the spin-orbit splitting resulting from an electric field. In contrast to previous studies, where the carriers have usually been
Strong Dependence of Spin Direction and Wave Function Localization on In-plane Wave Vector in Wide Modulation-doped Quantum Wells
An important mechanism in spintronics is spin-splitting induced by structure and/or bulk inversion asymmetry. These effects are frequently assumed to depend on two parameters usually denoted by α and
Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers.
It is argued that the band-edge profile provides the important contribution for spin-orbit interaction due to barrier penetration of the envelope wave function and can provide the potential for high speed implementation in spintronics.
Rashba spin splitting in biased semiconductor quantum wells
Rashba spin splitting (RSS) in biased semiconductor quantum wells is investigated theoretically based on eight-band k center dot p theory. We find that at large wave vectors, RSS is both nonmonotonic
Spin-orbit interaction in symmetric wells with two subbands.
A new intersubband-induced SO term is derived which resembles the functional form of the Rashba SO but is nonzero even in symmetric structures, which gives rise to a nonzero ballistic spin-Hall conductivity and can induce an unusual Zitterbewegung with cycloidal trajectories without magnetic fields.
Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures
We review the spin splitting of subband energies caused by bulk and structure inversion asymmetries in semiconductor III–V and II–VI heterostructures. We present both theoretical and experimental
Spin orientation and spin precession in inversion-asymmetric quasi-two-dimensional electron systems
Inversion-asymmetry-induced spin splitting of the electron states in quasi-two-dimensional (quasi-2D) systems can be attributed to an effective magnetic field B which varies in magnitude and
Magnification of the spin Hall effect in a bilayer electron gas
Spin transport properties of a coupled bilayer electron gas with Rashba spin-orbit coupling are studied. The definition of the spin currents in each layer as well as the corresponding continuity-like
Nonballistic spin-field-effect transistor.
A spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types is proposed, which is tolerant against spin-independent scattering processes and the requirement of strictly ballistic transport can be relaxed.
Effective-mass Hamiltonian and boundary conditions for the valence bands of semiconductor microstructures.
  • Foreman
  • Physics
    Physical review. B, Condensed matter
  • 1993
Using the recently developed exact envelope-function theory, an explicit form for the effective-mass Hamiltonian is derived for the valence bands of a semiconductor quantum well or superlattice and it is shown that the correct form of the Hamiltonian gives physically reasonable results.