Analysis of device geometry on the ruggedness of power DMOS transistor supported by 3-D modeling and simulation

Abstract

The influence of geometrical dimensions on the properties of power DMOSFET's has been studied by 3-D numerical modeling and simulation. The results of 3-D simulation provide a very effective way for the identification of failure mechanism and location of device hot-spots. The analysis of the influence of the geometry of one device cell including the… (More)

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Cite this paper

@article{Vrbicky2006AnalysisOD, title={Analysis of device geometry on the ruggedness of power DMOS transistor supported by 3-D modeling and simulation}, author={A. Vrbicky and Daniel Donoval and Juraj Marek and Ales Chv{\'a}la and P. Beno}, journal={2006 International Conference on Advanced Semiconductor Devices and Microsystems}, year={2006}, pages={259-262} }