Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance

@article{Guo2007AnalysisOC,
  title={Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobility and conductance},
  author={Dong Guo and T. Miyadera and S. Ikeda and T. Shimada and K. Saiki},
  journal={Journal of Applied Physics},
  year={2007},
  volume={102},
  pages={023706}
}
The gate bias and temperature dependent field-effect mobility and conductance of a polycrystalline pentacene thin film transistor (TFT) were analyzed to study the charge transport in the material. Since both heating and cooling can obviously change the film morphology, a relatively narrow temperature range was adopted to rule out the possible influence of structure variation on the device characterization. Both mobility and conductance values increased with the gate bias and showed a thermally… Expand
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