Analysis of a junction termination structure for ideal breakdown voltage in p-n junction devices

@article{Tanaka1980AnalysisOA,
  title={Analysis of a junction termination structure for ideal breakdown voltage in p-n junction devices},
  author={Toshiki Tanaka and Yoshihiko Mochizuki and Mutsuo Okamura},
  journal={IEEE Transactions on Electron Devices},
  year={1980},
  volume={27},
  pages={261-265}
}
Electric-field distribution and avalanche breakdown voltage in reverse-biased p-n junction devices having a concave p-n junction termination structure are analyzed by a two-dimensional numerical method. It is shown that there are two peaks in the electric field of the device. One peak, near the p-n junction edge, is smaller than the other peak, found in the one-dimensional region, so that an ideal breakdown voltage can be obtained. This desirable feature comes partly from the excessive… CONTINUE READING