Analysis of Source Doping Effect in Tunnel FETs With Staggered Bandgap

@article{Min2015AnalysisOS,
  title={Analysis of Source Doping Effect in Tunnel FETs With Staggered Bandgap},
  author={Jie Min and Jianzhi Wu and Yuan Taur},
  journal={IEEE Electron Device Letters},
  year={2015},
  volume={36},
  pages={1094-1096}
}
The effect of source doping on tunnel FET (TFET) currents is investigated analytically for the case of an exponential barrier. Source depletion is coupled to the channel potential profile through the continuity of field at the junction edge. Closed form WKB (Wentzel-Kramers-Brillouin) integral are carried out by considering mixed electron and hole tunneling in heterojunction TFETs with a staggered bandgap. It is shown that there is an optimum source doping that maximizes the TFET current. A… CONTINUE READING
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