Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits

@article{Fan2012AnalysisOS,
  title={Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic Circuits},
  author={Ming-Long Fan and Vita Pi-Ho Hu and Yin-Nien Chen and Pin Su and Ching-Te Chuang},
  journal={IEEE Transactions on Electron Devices},
  year={2012},
  volume={59},
  pages={2227-2234}
}
This paper analyzes the impacts of single-charged-trap-induced random telegraph noise (RTN) on FinFET devices in tied- and independent-gate modes, 6T static random access memory (SRAM) cell stability, and several basic logic circuits. The dependence of RTN on trap location, EOT, and temperature is evaluated through 3-D atomistic TCAD simulation. It is observed that the charged trap located near the bottom of sidewall (gate) interface and in the middle region between the source and drain will… CONTINUE READING
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