Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors

  title={Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors},
  author={P. Gaucci and Antonio Valletta and Luigi Mariucci and A. Pecora and Luca Maiolo and Guglielmo Fortunato},
  journal={IEEE Electron Device Letters},
Self-heating-related instabilities have been studied in p-channel polycrystalline-silicon thin-film transistors. The spatial distribution of the interface-state and fixed-oxide-charge densities generated during self-heating experiments has been analyzed and quantitatively determined by using negative-bias temperature stress experiments and 2-D numerical simulations. In addition, the observed asymmetry in the output characteristics with respect to source/drain contact reversal is also perfectly… CONTINUE READING

From This Paper

Figures, tables, results, connections, and topics extracted from this paper.
7 Extracted Citations
12 Extracted References
Similar Papers

Citing Papers

Publications influenced by this paper.
Showing 1-7 of 7 extracted citations

Referenced Papers

Publications referenced by this paper.
Showing 1-10 of 12 references

Interface-trap generation at ultrathin SiO2 (4–6 nm)-Si interfaces during negative-bias temperature aging

  • S. Ogawa, M. Shimaya, N. Shiono
  • J. Appl. Phys., vol. 77, no. 3, pp. 1137–1148…
  • 1995
Highly Influential
5 Excerpts

Analysis of thermal distribution in low-temperature polycrystalline silicon p-channel thin film transistor

  • S. Hashimoto, Y. Uraoka, T. Fuyuki, Y. Morita
  • Jpn. J. Appl. Phys., vol. 45, no. 1A, pp. 7–12…
  • 2006
Highly Influential
4 Excerpts

Self-heating effects in polycrystalline silicon thin film transistor

  • A. Valletta, A. Moroni, L. Mariucci, A. Bonfiglietti, G. Fortunato
  • Appl. Phys. Lett., vol. 89, no. 9, p. 093 509…
  • 2006
3 Excerpts

Numerical analysis of electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallisation

  • L. Mariucci, F. Giacometti, +4 authors L. Colalongo
  • Electron. Lett., vol. 34, no. 9, pp. 924–926, Apr…
  • 1998
1 Excerpt

Influence of melt depth in laser crystallized poly-Si thin film transistors

  • S. D. Brotherton, D. J. McCulloch, J. P. Gowers, J. R. Ayres, M. J. Trainor
  • J. Appl. Phys., vol. 82, no. 8, pp. 4086–4094…
  • 1997
1 Excerpt

Plasma deposited oxynitride films: Structural and electrical characterization

  • S. Scaglione, L. Mariucci, A. Mattacchini, A. Pecora, G. Fortunato
  • Proc. MRS Symp., 1993, vol. 284, pp. 345–350.
  • 1993
1 Excerpt

Similar Papers

Loading similar papers…