Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors

@article{Gaucci2010AnalysisOS,
  title={Analysis of Self-Heating-Related Instability in Self-Aligned p-Channel Polycrystalline-Silicon Thin-Film Transistors},
  author={P. Gaucci and Antonio Valletta and Luigi Mariucci and A. Pecora and Luca Maiolo and Guglielmo Fortunato},
  journal={IEEE Electron Device Letters},
  year={2010},
  volume={31},
  pages={830-832}
}
Self-heating-related instabilities have been studied in p-channel polycrystalline-silicon thin-film transistors. The spatial distribution of the interface-state and fixed-oxide-charge densities generated during self-heating experiments has been analyzed and quantitatively determined by using negative-bias temperature stress experiments and 2-D numerical simulations. In addition, the observed asymmetry in the output characteristics with respect to source/drain contact reversal is also perfectly… CONTINUE READING

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