Analysis of SOI RESURF structure with charge sharing concept


A simple one-dimensional (1-D) analytical method is proposed to analyze the breakdown properties of silicon-on-insulator (SOI) reduced surface field (RESURF) structure. Based on charge sharing concept, this approach transforms the inherent two-dimensional (2-D) effects into a simple 1-D equivalent depending on device parameters. It is first found that given the silicon thickness, the thicker buried oxide (BOX) maybe unexpectedly reduce the breakdown voltage. Device designers could minimize the on-resistance and maximize the breakdown voltage through the optimal condition provided by this method, which is suitable both in the partial and full depletion cases. The analytical results are verified by the comparisons with experimental data and numerical simulations

4 Figures and Tables

Cite this paper

@article{Yanga2006AnalysisOS, title={Analysis of SOI RESURF structure with charge sharing concept}, author={Wenwei Yanga and Yuehui Yub and Zhiping Yua and Lilin Tiana}, journal={2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings}, year={2006}, pages={245-247} }