Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application

Abstract

This paper describes the analysis of linear performance of PAE 50% for wide band CDMA (W-CDMA) with a new structure FET "Self aligned gate PHEMT (Saga-PHEMT)" which was fabricated in 0.8 /spl mu/m WNx-gate self aligned structure on epitaxial layers. We obtained relations between ACPR and AM-AM/AM-PM conversions as follows; the ACPR is mainly controlled with the AM-AM conversion, and the phase-delay of the AM-PM conversion functions effectively as prevention of ACPR deteriorations which are caused by nonlinear AM-AM conversion.

Cite this paper

@article{Sasaki1999AnalysisOP, title={Analysis of PAE 50% highly linear characteristics of new structure transistor "self-aligned gate PHEMT" for W-CDMA application}, author={T. Sasaki and Yogo Takada and Y. Tanabe and Tatsuki Nitta and Youhei Kakiuchi and Michihiro Yoshimura and Roberto Joanne Yashihiro Fujieda and T. Suzuki and Hidekazu Kayano and Mamiko Hirose and Yuko Kitaura}, journal={GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)}, year={1999}, pages={131-134} }