Analysis of Nonuniform ESD Current Distribution in Deep Submicron NMOS Transistors

@inproceedings{Oh2001AnalysisON,
  title={Analysis of Nonuniform ESD Current Distribution in Deep Submicron NMOS Transistors},
  author={Kwang-Hoon Oh and Charvaka Duvvury and Kaustav Banerjee and Robert W. Dutton},
  year={2001}
}
This paper presents a detailed study of the nonuniform bipolar conduction phenomenon under electrostatic discharge (ESD) events in single-finger NMOS transistors and analyzes its implications for the design of ESD protection for deep-submicron CMOS technologies. It is shown that the uniformity of the bipolar current distribution under ESD conditions is severely degraded depending on device finger width ( ) and significantly influenced by the substrate and gate-bias conditions as well. This… CONTINUE READING
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