Analysis of Heat Generation from a Power Si MOSFET

@inproceedings{Kibushi2013AnalysisOH,
  title={Analysis of Heat Generation from a Power Si MOSFET},
  author={Risako Kibushi and Tomoyuki Hatakeyama and Shinji Nakagawa and Masaru Ishizuka},
  year={2013}
}
This paper describes the thermal properties of power Si MOSFETs. Recently, the thermal problems of driving devices have been gaining attention. The thermal design of semiconductor chips is important since the main heat source in a driving device is the semiconductor chips. Power Si MOSFETs, which are widely used as semiconductor devices in car electronics, have serious thermal problems, since they use high voltages. Therefore, the thermal properties of power Si MOSFETs must be studied in order… CONTINUE READING

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