• Corpus ID: 113828500

Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperature

@inproceedings{Pavanello2003AnalysisOH,
  title={Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 $\mu$m floating-body partially-depleted SOI MOSFET at low temperature},
  author={Marcelo Antonio Pavanello and Jo{\~a}o Antonio Martino and Eddy Simoen and Abdelkarim Mercha and Cor Claeys and H. van Meer and Kristin M. De Meyer},
  year={2003}
}

• M. Pavanello, J. Martino, +4 authors K. Meyer
• Published 2003
• Engineering

This work studies the influence of the HALO implantation on the occurrence of the self-heating effect and self-heating assisted impact ionization in a deep submicrometer partially depleted SOI technology with floating-body from room temperature down to 90 K. For the nMOSFETs, the HALO region causes a negative output conductance both at reduced and high gate overdrive voltages while the non-HALO devices do not exhibit such an effect. For the pMOSFETs, the HALO region does not induce a negative output conductance region.