Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperature
@inproceedings{Pavanello2003AnalysisOH,
title={Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperature},
author={M. A. Pavanello and J. A. Martino and E. Simoen and A. Mercha and C. Claeys and H. V. Meer and K. D. Meyer},
year={2003}
}This work studies the influence of the HALO implantation on the occurrence of the self-heating effect and self-heating assisted impact ionization in a deep submicrometer partially depleted SOI technology with floating-body from room temperature down to 90 K. For the nMOSFETs, the HALO region causes a negative output conductance both at reduced and high gate overdrive voltages while the non-HALO devices do not exhibit such an effect. For the pMOSFETs, the HALO region does not induce a negative… CONTINUE READING
