Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperature
@inproceedings{Pavanello2003AnalysisOH, title={Analysis of HALO implant influence on the self-heating and self-heating ennhanced impact ionization on 0.13 $\mu$m floating-body partially-depleted SOI MOSFET at low temperature}, author={Marcelo Antonio Pavanello and Jo{\~a}o Antonio Martino and Eddy Simoen and Abdelkarim Mercha and Cor Claeys and H. van Meer and Kristin M. De Meyer}, year={2003} }
This work studies the influence of the HALO implantation on the occurrence of the self-heating effect and self-heating assisted impact ionization in a deep submicrometer partially depleted SOI technology with floating-body from room temperature down to 90 K. For the nMOSFETs, the HALO region causes a negative output conductance both at reduced and high gate overdrive voltages while the non-HALO devices do not exhibit such an effect. For the pMOSFETs, the HALO region does not induce a negative…